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inchange semiconductor product specification silicon npn power transistors 2N3237 description with to-3 package excellent safe operating area low collector saturation voltage applications for power amplifier and switching circuits applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 90 v v ceo collector-emitter voltage open base 90 v v ebo emitter-base voltage open collector 5 v i c collector current 20 a i b base current 7.5 a p d total power dissipation t c =25 200 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 /w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2N3237 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 90 v v ce(sat)-1 collector-emitter saturation voltage i c =10a; i b =1.0a 1.4 v v ce(sat)-2 collector-emitter saturation voltage i c =20a ;i b =4.0a 4.0 v v be(on) base-emitter on voltage i c =10a ; v ce =4v 2.2 v i ceo collector cut-off current v ce =45v; i b =0 1.0 ma i cbo collector cut-off current v cb =90v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =4v 40 h fe-2 dc current gain i c =10a ; v ce =4v 15 60 h fe-3 dc current gain i c =20a ; v ce =4v 5 inchange semiconductor product specification 3 silicon npn power transistors 2N3237 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
Price & Availability of 2N3237 |
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